This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZX3CDBS1M832TA +BOM

Combination of Schottky NPN transistors rated for 20V/1A

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZX3CDBS1M832TA
Datasheet:

ZX3CDBS1M832TA Datasheet (PDF)
Transistor Type:

NPN + Diode (Isolated)
Current - Collector (Ic) (Max):

4.5 A
Voltage - Collector Emitter Breakdown (Max):

20 V
Vce Saturation (Max) @ Ib, Ic:

270mV @ 125mA, 4.5A
EDA/CAD Models:

Request Free CAD Models for ZX3CDBS1M832TA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

ZX3CDBS1M832TA General Description

The ZX3CDBS1M832TA likely represents a crucial piece of technology, possibly utilized in a wide range of electronic applications. The absence of detailed information makes it challenging to pinpoint its exact function or application, emphasizing the importance of obtaining its datasheet or contacting the manufacturer for clarification. With further insight into its electrical characteristics, pinout configuration, and maximum ratings, the potential uses and benefits of the ZX3CDBS1M832TA can be fully realized

Key Features

Extremely Low Saturation Voltage (150mV @1A)
HFE characterised up to 6A
IC = 4.5A Continuous Collector Current
Extremely Low VF, fast switching Schottky
3mm x 2mm MLP

Specifications

Transistor Type	NPN + Diode (Isolated)	Current - Collector (Ic) (Max)	4.5 A
Voltage - Collector Emitter Breakdown (Max)	20 V	Vce Saturation (Max) @ Ib, Ic	270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max)	25nA	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2A, 2V
Power - Max	3 W	Frequency - Transition	140MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZX3CDBS1M832