This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZXMC4559DN8TC +BOM

Robust and durable transistor for high-power application

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMC4559DN8TC
Datasheet:

ZXMC4559DN8TC Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

60V

ZXMC4559DN8TC General Description

The ZXMC4559DN8TC MOSFET is a powerhouse of efficient power conversion technology. Its robust design features a maximum voltage rating of 100V and a maximum continuous drain current of 1.4A, making it ideal for high-demand applications. With an ultra-low on-resistance of 1.5 ohms at 10V gate voltage, this MOSFET delivers exceptional performance, minimizing power losses and maximizing efficiency. The DFN8 package ensures a compact and lightweight footprint, while its low input/output capacitance further enhances overall performance by reducing switching losses

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.6A, 2.6A	Rds On (Max) @ Id, Vgs	55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs	20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1063pF @ 30V	Power - Max	2.1W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMC4559