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See Technical Specifications

ZXMD63C03X +BOM

Dual N-Channel ZXMD63C03X MOSFET from Diodes Inc. in MSOP8 Package

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMD63C03X
Datasheet:

ZXMD63C03X Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

30V
EDA/CAD Models:

Request Free CAD Models for ZXMD63C03X

ZXMD63C03X General Description

The ZXMD63C03X is a highly efficient power MOSFET driver that offers exceptional performance and reliability. With a high peak current capability of up to 6A, it is perfectly suited for applications that demand high power density and efficiency. Its wide operating voltage range of 4.5V to 18V makes it versatile and adaptable to various power supply configurations, while its fast propagation delay of only 14ns ensures rapid switching speeds for high-frequency applications

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Rds On (Max) @ Id, Vgs	135mOhm @ 1.7A, 10V	Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V
Power - Max	1.04W	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	ZXMD63