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See Technical Specifications

ZXMHC3A01N8TC +BOM

ZXMHC3A01N8TC: 30V SO8 Complementary Enhancement Mode MOSFET H-Bridge, 0.87 W, RoHS

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMHC3A01N8TC
Datasheet:

ZXMHC3A01N8TC Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N and 2 P-Channel (Full Bridge)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

30V

ZXMHC3A01N8TC General Description

Safety and reliability are key priorities for the ZXMHC3A01N8TC, which is evident in its protection features such as overcurrent protection, thermal shutdown, and reverse polarity protection. These features ensure the longevity of the connected circuitry and provide peace of mind for users. Additionally, its fast propagation delay of 10ns enables precise and efficient control of motor speed and direction, contributing to its high performance

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N and 2 P-Channel (Full Bridge)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.17A, 1.64A	Rds On (Max) @ Id, Vgs	125mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 25V, 204pF @ 15V	Power - Max	870mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMHC3A01