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Dual N/P-MOSFET transistor designed for unipolar operation, supporting voltages of 30V and -30V, currents of 3
SOIC-8Manufacturer:
Diodes Incorporated
Mfr.Part #:
ZXMHC3F381N8TC
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel, P-Channel
Number Of Channels:
4 Channel
EDA/CAD Models:
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Mosfet Array 30V 3.98A, 3.36A 870mW Surface Mount 8-SO
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 4 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.98 A, 4.13 A | Rds On - Drain-Source Resistance | 33 mOhms, 55 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 9 nC, 12.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 870 mW |
Channel Mode | Enhancement | Series | ZXMHC3 |
Configuration | Quad | Fall Time | 6.3 ns, 21 ns |
Forward Transconductance - Min | 11.8 S, 14 S | Product Type | MOSFET |
Rise Time | 3.3 ns, 3 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel, 2 P-Channel |
Type | H-Bridge | Typical Turn-Off Delay Time | 11.5 ns, 30 ns |
Typical Turn-On Delay Time | 2.5 ns, 1.9 ns | Unit Weight | 0.026455 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.779 | $0.78 |
10+ | $0.640 | $6.40 |
30+ | $0.571 | $17.13 |
100+ | $0.503 | $50.30 |
500+ | $0.462 | $231.00 |
1000+ | $0.440 | $440.00 |
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