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ZXMHC3F381N8TC +BOM

Dual N/P-MOSFET transistor designed for unipolar operation, supporting voltages of 30V and -30V, currents of 3

ZXMHC3F381N8TC General Description

Mosfet Array 30V 3.98A, 3.36A 870mW Surface Mount 8-SO

Key Features

2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 4 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.98 A, 4.13 A Rds On - Drain-Source Resistance 33 mOhms, 55 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9 nC, 12.7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 870 mW
Channel Mode Enhancement Series ZXMHC3
Configuration Quad Fall Time 6.3 ns, 21 ns
Forward Transconductance - Min 11.8 S, 14 S Product Type MOSFET
Rise Time 3.3 ns, 3 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 N-Channel, 2 P-Channel
Type H-Bridge Typical Turn-Off Delay Time 11.5 ns, 30 ns
Typical Turn-On Delay Time 2.5 ns, 1.9 ns Unit Weight 0.026455 oz

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