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ZXMHC6A07N8TC +BOM

MOSFET device featuring dual N/P-Channels, rated for 60V with 1.8A/1.42A current capability, enclosed in SOIC8 package

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMHC6A07N8TC
Datasheet:

ZXMHC6A07N8TC Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N and 2 P-Channel (Full Bridge)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

60V

ZXMHC6A07N8TC General Description

The ZXMHC6A07N8TC gate driver is a versatile and efficient solution for various high-power applications. With a peak output current of 6A, it is capable of driving MOSFETs and IGBTs with ease, making it suitable for motor control, power supplies, and inverters. Its wide input voltage range of 4.5V to 18V allows for compatibility with a variety of systems, while its low standby current consumption of less than 10μA helps to save energy when not in use

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N and 2 P-Channel (Full Bridge)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.39A, 1.28A	Rds On (Max) @ Id, Vgs	250mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	166pF @ 40V, 141pF @ 50V	Power - Max	870mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMHC6A07