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ZXMHC6A07T8TA +BOM

Compact pin SMT/R package ideal for space-constrained project

  • Manufacturer:

    Diodes Incorporated

  • Mfr.Part #:

    ZXMHC6A07T8TA

  • Datasheet:

    ZXMHC6A07T8TA Datasheet (PDF) pdf-icon

  • REACH:

    Details

  • Technology:

    Si

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    N-Channel, P-Channel

ZXMHC6A07T8TA General Description

Mosfet Array 60V 1.6A, 1.3A 1.3W Surface Mount SM8

Key Features

  • 4-channel FET array with 2 N and 2 P-Channel (H-Bridge) FETs
  • Maximum power dissipation of 1.7 W
  • Drain-source resistance of 300 mOhms 425 mOhms
  • Packaged in a SM8 Cut Tape (CT) Alternate Packaging
  • Operating temperature range of -55°C ~ 150°C (TJ)
  • Gate charge of 3.2nC @ 10V
  • Transconductance of 2.3 S 1.8 S
  • Maximum drain-source resistance of 300 mOhm @ 1.8A, 10V

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel, P-Channel Number of Channels 4 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 1.8 A, 1.5 A
Rds On - Drain-Source Resistance 300 mOhms, 425 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 3.2 nC, 5.1 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Enhancement
Series ZXMHC6A Configuration Quad
Fall Time 2 ns, 5.8 ns Forward Transconductance - Min 2.3 S, 1.8 S
Height 1.6 mm Length 6.7 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 1.4 ns, 2.3 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 2 N-Channel, 2 P-Channel
Type MOSFET Typical Turn-Off Delay Time 4.9 ns, 13 ns
Typical Turn-On Delay Time 1.8 ns, 1.6 ns Width 3.7 mm
Unit Weight 0.002610 oz

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