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Bipolar Junction Transistors - BJT
TO-261-4,TO-261AAManufacturer:
Diodes Incorporated
Mfr.Part #:
ZXTP2012GTA
Datasheet:
Transistor Type:
PNP
Current - Collector (Ic) (Max):
5.5 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 500mA, 5A
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Bipolar (BJT) Transistor PNP 60 V 5.5 A 120MHz 3 W Surface Mount SOT-223-3
Transistor Type | PNP | Current - Collector (Ic) (Max) | 5.5 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 500mA, 5A |
Current - Collector Cutoff (Max) | 20nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
Power - Max | 3 W | Frequency - Transition | 120MHz |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | ZXTP2012 |
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