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See Technical Specifications

2N4403G +BOM

PNP Bipolar Transistor, TO-92

Manufacturer:

onsemi
Mfr.Part #:

2N4403G
Datasheet:

2N4403G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for 2N4403G

Email: [email protected]

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Tel: +852 95804164

2N4403G General Description

From audio amplifiers to voltage regulators, the 2N4403G proves to be a versatile and reliable component that meets the demands of diverse applications. Its high-quality construction and consistent performance make it a trusted choice for professionals and hobbyists alike, offering peace of mind and exceptional functionality in every project

Key Features

Wide Temperature Range from -55°C to +150°C
High-Gain Amplification with Low Noise Figure
Pin-Count Optimized for Reduced Component Count
Designed using Advanced Computer-Aided Design Tools
Suitable for High-Speed Telecommunications Systems
Frequency Selective Devices for Enhanced Performance

Specifications

Source Content uid	2N4403G	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Collector Current-Max (IC)	0.6 A	Collector-Emitter Voltage-Max	40 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	100
JEDEC-95 Code	TO-92	JESD-30 Code	O-PBCY-T3
JESD-609 Code	e1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	1.5 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN SILVER COPPER
Terminal Form	THROUGH-HOLE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	200 MHz	Turn-off Time-Max (toff)	255 ns
Turn-on Time-Max (ton)	35 ns	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	750 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	600 mA
DC Collector/Base Gain hfe Min	30	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm