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2N6027RLRAG +BOM

2N6027RLRAG Thyristor

2N6027RLRAG General Description

Programmable Unijunction Transistor (UJT) 40V 300 mW TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Key Features

  • Programmable − RBB, η, IV and IP
  • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
  • Low Gate to Anode Leakage Current − 10 nA Maximum
  • High Peak Output Voltage − 11 V Typical
  • Low Offset Voltage − 0.35 V Typical (RG = 10 kΩ)
  • Pb−Free Packages are Available

Specifications

Source Content uid 2N6027RLRAG Pbfree Code Yes
Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.30.00.80 Anode to Cathode Voltage-Max 40 V
Configuration SINGLE JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 JESD-609 Code e1
Number of Elements 1 Number of Terminals 3
On-state Current-Max 150 A Operating Temperature-Max 125 °C
Operating Temperature-Min -50 °C Peak Current-Max 2 µA
Peak Reflow Temperature (Cel) 260 Power Dissipation-Max 0.3 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Terminal Form THROUGH-HOLE
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 40
Trigger Device Type PROGRAMMABLE UJT Valley Current-Min 70 µA
Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Minimum Operating Temperature - 50 C Maximum Operating Temperature + 100 C
Series 2N6027 Height 5.33 mm
Length 5.2 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Width 4.19 mm Unit Weight 0.036015 oz

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