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See Technical Specifications

2N7002ET1G +BOM

N-Channel MOSFET with a 60V maximum voltage and 0.26A current handling capability, packaged in SOT-23 by ON Semiconductor

Manufacturer:

Onsemi
Mfr.Part #:

2N7002ET1G
Datasheet:

2N7002ET1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for 2N7002ET1G

2N7002ET1G General Description

With its 60V maximum drain source voltage and 310mA continuous drain current, the 2N7002ET1G N Channel Mosfet is a reliable and efficient solution for various electronic applications. Its surface mount mounting and low Rds(On) test voltage of 10V make it easy to integrate into circuit designs while minimizing power loss. Additionally, its RoHS compliance demonstrates its commitment to environmental sustainability and safe manufacturing practices, making it an ideal choice for eco-friendly projects and initiatives

Key Features

Magnetic Shielding
Self-Recovering
Low EMI

Application

Sensor Interface
LED Driver
Motor Control

Specifications

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	60	VGS Max (V)	20
VGS(th) Max (V)	2.5	ID Max (A)	0.31
PD Max (W)	0.042	RDS(on) Max @ VGS = 4.5 V (mΩ)	3000
RDS(on) Max @ VGS = 10 V (mΩ)	2500	Qg Typ @ VGS = 10 V (nC)	0.81
Ciss Typ (pF)	26.7	Pricing ($/Unit)	$0.0236Sample