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See Technical Specifications

2N7002KT1G +BOM

Compact N-channel MOSFET engineered for small-scale signal operations

Manufacturer:

Onsemi
Mfr.Part #:

2N7002KT1G
Datasheet:

2N7002KT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for 2N7002KT1G

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2N7002KT1G General Description

The 2N7002KT1G by Onsemi is an N Channel Mosfet that boasts a drain source voltage of 60V and a continuous drain current of 380mA, making it suitable for a wide range of electronic applications. Its surface mount design allows for easy integration into circuit designs, while its RoHS compliance ensures environmental friendliness. With an Rds(On) test voltage of 10V and power dissipation of 420mW, this Mosfet delivers efficient power performance. Additionally, the full reel packaging option provides convenience for high-volume production needs

Key Features

Compact Design
Eco-Friendly Materials
Precise Voltage Control
Robust Construction
Fault-Tolerant Architecture
Simplified Installation Process

Application

Lighting Control Systems
Switching Regulator Designs
RFID Reader Modules

Specifications

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	60	VGS Max (V)	20
VGS(th) Max (V)	2.3	ID Max (A)	0.38
PD Max (W)	0.42	RDS(on) Max @ VGS = 4.5 V (mΩ)	2500
RDS(on) Max @ VGS = 10 V (mΩ)	1600	Qg Typ @ VGS = 10 V (nC)	0.7
Ciss Typ (pF)	24.5	Pricing ($/Unit)	$0.0217Sample