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See Technical Specifications

2N7002KW +BOM

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

Manufacturer:

onsemi
Mfr.Part #:

2N7002KW
Datasheet:

2N7002KW Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for 2N7002KW

Email: [email protected]

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Tel: +852 95804164

2N7002KW General Description

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

Key Features

Advanced Analog-to-Digital Conversion
High-Resolution Digital-to-Analog Conversion
Low Latency and Jitter-Free Signal Processing
Highly Accurate Measurement Capabilities
Real-Time Data Streaming and Analysis
Multi-Channel Capability with High Flexibility

Application

Great for small projects
Easy to use and versatile
High quality performance

Specifications

Source Content uid	2N7002KW	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	17 Weeks
Additional Feature	LOW THRESHOLD	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.31 A
Drain-source On Resistance-Max	1.6 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	5 pF	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.3 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	310 mA
Rds On - Drain-Source Resistance	3 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	300 mW	Channel Mode	Enhancement
Series	2N7002KW	Height	1 mm
Length	2 mm	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	1.25 mm
Unit Weight	0.000212 oz