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See Technical Specifications

2N7002LT1G +BOM

Small-Signal FET with N-Type Channel, TO-236 Package, 60V Voltage Rating

Manufacturer:

Onsemi
Mfr.Part #:

2N7002LT1G
Datasheet:

2N7002LT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for 2N7002LT1G

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2N7002LT1G General Description

- The 2N7002LT1G Mosfet is a versatile electronic component that is designed for N-channel applications. With a drain-source voltage of 60V and a continuous drain current of 115mA, this Mosfet is capable of handling moderate power loads with ease. Its surface mount design makes it easy to integrate into a variety of circuit configurations, making it suitable for a wide range of electronic devices

Key Features

Fast Design Cycle Time
Interchangeable with Other Devices
Real-Time Monitoring Capabilities
Precise Timing and Synchronization
Ergonomic User Interface
In-System Programming Available

Application

Smartphone compatibility
Energy-saving solution
Optimal power management

Specifications

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	60	VGS Max (V)	±20
VGS(th) Max (V)	2.5	ID Max (A)	0.115
PD Max (W)	0.225	RDS(on) Max @ VGS = 4.5 V (mΩ)	7500
RDS(on) Max @ VGS = 10 V (mΩ)	7500	Ciss Typ (pF)	50
Pricing ($/Unit)	$0.0269Sample