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See Technical Specifications

2N7002WT1G +BOM

Compact power device for automotive system

Manufacturer:

Onsemi
Mfr.Part #:

2N7002WT1G
Datasheet:

2N7002WT1G Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7002WT1G

2N7002WT1G General Description

Ideal for use in low voltage applications, the 2N7002WT1G is a reliable choice for designers looking to switch or amplify signals in their circuits. The SC-70 package makes it easy to incorporate this MOSFET into compact designs, while the full reel packaging option is perfect for high volume production runs

Key Features

Excellent Frequency Response
Symmetrical Signal Output
Limited Equivalent Series Resistance (ESR)
High Power Handling Capacity

Application

Wireless Sensor Networks
Robotics Applications
Healthcare Monitoring Devices

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	310 mA	Rds On - Drain-Source Resistance	1.6 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	280 mW	Channel Mode	Enhancement
Series	2N7002W	Configuration	Single
Fall Time	9 ns	Height	0.85 mm
Length	2.1 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	9 ns
Factory Pack Quantity	30000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	55.8 ns
Typical Turn-On Delay Time	12.2 ns	Width	1.24 mm
Unit Weight	0.000219 oz