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2SD1047 +BOM

High power NPN epitaxial planar bipolar transistor

2SD1047 General Description

With its utilization of cutting-edge BiT-LA technology, the 2SD1047 NPN transistor is engineered to excel in linear amplification applications. This innovative approach to transistor design results in exceptional gain linearity, making the 2SD1047 an ideal choice for demanding amplification tasks. Whether you're designing professional audio equipment, high-fidelity systems, or precision measurement instruments, the 2SD1047 delivers the performance and reliability you can depend on

Key Features

  • Compact and lightweight design
  • Easily integratable with MCU
  • Fully tested for shock and vibration
  • Safe for automotive applications

Specifications

Source Content uid 2SD1047 Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 22 Weeks
Collector Current-Max (IC) 12 A Collector-Emitter Voltage-Max 140 V
Configuration SINGLE DC Current Gain-Min (hFE) 50
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 100 W
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 20 MHz

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