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BF909R +BOM

N-channel dual-gate MOSFET

Key Features

  • Specially designed for use at 5 V supply voltage
  • High forward transfer admittance
  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Superior cross-modulation performance during AGC.

Specifications

Source Content uid BF909R Pbfree Code Yes
Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 Additional Feature LOW NOISE
Case Connection SOURCE Configuration COMPLEX
DS Breakdown Voltage-Min 7 V Drain Current-Max (ID) 0.04 A
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 0.05 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-PDSO-G4
JESD-609 Code e3 Number of Elements 2
Number of Terminals 4 Operating Mode DUAL GATE, ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON

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