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BFG235 +BOM

BFG235: Bipolar Junction Transistor (BJT) - A semiconductor device for amplifying or switching electronic signals

Manufacturer:

Infineon
Mfr.Part #:

BFG235
Datasheet:

BFG235 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

15 V
EDA/CAD Models:

Request Free CAD Models for BFG235

BFG235 General Description

Housed in a convenient SOT-223 package, the BFG235 ensures easy mounting and effective heat dissipation during operation. Its low noise figure and high gain characteristics make it an ideal choice for low-noise amplifiers, where signal clarity is essential. Additionally, the BFG235 is RoHS compliant and lead-free, aligning with environmental standards and promoting sustainability in electronic design practices

Key Features

Improved spectral purity for reduced interference
Low distortion for clear audio and voice signals
Suitable for use in radio communication systems

Application

Boosting signals in IoT devices
Enhancing radar systems
Improving wireless routers

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	15 V	Collector- Base Voltage VCBO	25 V
Emitter- Base Voltage VEBO	2 V	Maximum DC Collector Current	300 mA
Pd - Power Dissipation	2 W	Gain Bandwidth Product fT	5.5 GHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Continuous Collector Current	300 mA	Height	1.6 mm
Length	6.5 mm	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si
Width	3.5 mm	Unit Weight	0.006632 oz