This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

BFG540W/X +BOM

Precision amplifier component ideal for RF communication system

BFG540W/X General Description

DESCRIPTIONNPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.FEATURES• High power gain• Low noise figure• High transition frequency• Gold metallization ensures    excellent reliability.

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability.

Specifications

Part Life Cycle Code Transferred ECCN Code EAR99
Collector Current-Max (IC) 0.12 A Configuration SINGLE
DC Current Gain-Min (hFE) 60 JESD-609 Code e3
Number of Elements 1 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.5 W Surface Mount YES
Terminal Finish MATTE TIN

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up