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D2002UK +BOM

single-ended DP MOSFET for V system

  • Manufacturer:

    TT Electronics / Semelab

  • Mfr.Part #:

    D2002UK

  • Datasheet:

    D2002UK Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Id - Continuous Drain Current:

    2 A

  • Vds - Drain-Source Breakdown Voltage:

    65 V

Key Features

  • SIMPLIFIED AMPLIFIER DESIGN
  • SUITABLE FOR BROAD BAND APPLICATIONS
  • LOWCrss
  • SIMPLE BIAS CIRCUITS
  • LOW NOISE
  • HIGH GAIN–13dB MINIMUM

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 2 A
Vds - Drain-Source Breakdown Voltage 65 V Operating Frequency 1 GHz
Gain 13 dB Output Power 5 W
Maximum Operating Temperature + 150 C Mounting Style SMD/SMT
Configuration Single Height 5.08 mm
Length 18.92 mm Pd - Power Dissipation 29 W
Product Type RF MOSFET Transistors Subcategory MOSFETs
Transistor Type DMOS FET Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Width 6.35 mm
Unit Weight 0.332245 oz

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