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See Technical Specifications

EMZ1T2R +BOM

Transistor GP NPN/PNP 50V 0.15A 6-Pin EMT T/R

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

EMZ1T2R
Datasheet:

EMZ1T2R Datasheet (PDF)
Transistor Type:

1 NPN, 1 PNP
Current - Collector (Ic) (Max):

150mA
Voltage - Collector Emitter Breakdown (Max):

50V
Vce Saturation (Max) @ Ib, Ic:

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

EMZ1T2R General Description

Whether it's for consumer electronics, automotive systems, or industrial equipment, the EMZ1T2R transistor array delivers the performance and reliability that manufacturers demand. With its compact SOT-563 and SOT-666 packaging and unlimited capacity, it's a convenient choice for high-volume production. The NPN and PNP transistors, along with their impressive temperature tolerance and low power requirements, make them suitable for a wide range of applications. Plus, with a high current gain, low collector-emitter voltage, and minimal leakage current, these transistors offer the efficiency and precision that modern electronic designs require

Key Features

1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.

Specifications

Transistor Type	1 NPN, 1 PNP	Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Power - Max	150mW	Frequency - Transition	180MHz, 140MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	EMZ1T2