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See Technical Specifications

FCD3400N80Z +BOM

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FCD3400N80Z
Datasheet:

FCD3400N80Z Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FCD3400N80Z

FCD3400N80Z General Description

The FCD3400N80Z SuperFET® II MOSFET delivers exceptional performance with its cutting-edge charge balance technology. This innovative technology helps to reduce conduction loss and improve overall efficiency, making it ideal for a range of applications including Audio, Laptop adapters, Lighting, and industrial power systems. With lower on-resistance and gate charge, this MOSFET offers superior switching capabilities and a higher avalanche energy rating, ensuring reliable and efficient operation in high voltage environments

Key Features

High Impedance to Ground (Typ. 1 MΩ @ 10V)
Excellent Phase Noise (Typ. -130 dBc/Hz)
Low Jitter Generation (Typ. 50 ps)

Application

Medical equipment
Telecommunications
Home appliances

Specifications

Source Content uid	FCD3400N80Z	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	55 Weeks
Application	SWITCHING	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON