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650V MOSFET SUPER FET FCA47N60
TO-3PN-3Manufacturer:
Mfr.Part #:
FCA47N60
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
EDA/CAD Models:
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Designed to minimize conduction loss and enhance switching capabilities, the SuperFET MOSFET sets a new standard for power components in the industry. Its ability to handle high dv/dt rates and increased avalanche energy further demonstrates its reliability and versatility. Engineers and designers can confidently integrate this MOSFET into their projects with the assurance of exceptional performance and optimized power efficiency
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 47 A |
Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 270 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 417 W | Channel Mode | Enhancement |
Tradename | SuperFET | Series | FCA47N60 |
Configuration | Single | Fall Time | 75 ns |
Forward Transconductance - Min | 40 S | Height | 20.1 mm |
Length | 16.2 mm | Product Type | MOSFET |
Rise Time | 210 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | N-Channel MOSFET | Typical Turn-Off Delay Time | 520 ns |
Typical Turn-On Delay Time | 185 ns | Width | 5 mm |
Unit Weight | 0.162260 oz |
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