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TO-3P Packaged N-type MOSFET, 500 Volts, 28 Amperes
TO-3PN-3Manufacturer:
Mfr.Part #:
FDA28N50F
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
EDA/CAD Models:
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By offering superior body diode performance, the FDA28N50F eliminates the need for additional components in certain applications, leading to improved system reliability. This makes it an ideal choice for a variety of switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts. With its advanced features and enhanced capabilities, the UniFET MOSFET family sets a new standard for power MOSFET technology
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 28 A |
Rds On - Drain-Source Resistance | 175 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 105 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 310 W | Channel Mode | Enhancement |
Tradename | UniFET | Series | FDA28N50F |
Configuration | Single | Fall Time | 101 ns |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 137 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 192 ns |
Typical Turn-On Delay Time | 67 ns | Width | 5 mm |
Unit Weight | 0.162260 oz |
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