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See Technical Specifications

FDA50N50 +BOM

N-Channel 500 V 48A (Tc) 625W (Tc) Through Hole TO-3PN

Manufacturer:

onsemi
Mfr.Part #:

FDA50N50
Datasheet:

FDA50N50 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
Current - Continuous Drain (Id) @ 25°C:

48A (Tc)
EDA/CAD Models:

Request Free CAD Models for FDA50N50

Email: [email protected]

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Tel: +852 95804164

FDA50N50 General Description

This MOSFET family is specifically designed for use in switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX systems, and electronic lamp ballasts. Its versatility and superior performance make it an ideal choice for a wide range of power electronics applications requiring high voltage capabilities and efficient power management

Key Features

R_DS(on) = 56mΩ ( Max.)@ V_GS = 10V, I_D = 29.5A
Low gate charge ( Typ. 77nC)
Low C_rss ( Typ. 80pF)
100% avalanche tested

Application

This product is general usage and suitable for many different applications.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	105mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	6460 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	625W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole