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Tube packaging of N-channel 300V 59A MOSFET with TO-3P pins
TO-3PN-3Manufacturer:
Mfr.Part #:
FDA59N30
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
EDA/CAD Models:
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The FDA59N30 MOSFET from the UniFET™ series is engineered to meet the rigorous demands of modern power conversion systems. Its innovative design focuses on achieving lower on-state resistance, resulting in improved efficiency and reliability in high voltage applications. With a strong emphasis on reducing losses and enhancing switching performance, this MOSFET is well-suited for applications requiring precise power control and stability
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 300 V | Id - Continuous Drain Current | 59 A |
Rds On - Drain-Source Resistance | 56 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 100 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 500 W | Channel Mode | Enhancement |
Series | FDA59N30 | Configuration | Single |
Fall Time | 200 ns | Height | 20.1 mm |
Length | 16.2 mm | Product Type | MOSFET |
Rise Time | 575 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 120 ns | Typical Turn-On Delay Time | 140 ns |
Width | 5 mm | Part # Aliases | FDA59N30_NL |
Unit Weight | 0.162260 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $3.554 | $3.55 |
10+ | $3.077 | $30.77 |
30+ | $2.795 | $83.85 |
90+ | $2.509 | $225.81 |
450+ | $2.376 | $1,069.20 |
900+ | $2.316 | $2,084.40 |
The prices below are for reference only.