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FDB8860 +BOM

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ

FDB8860 General Description

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ

Key Features

  • RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A
  • Qg(5) = 89nC (Typ), VGS = 5V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

Source Content uid FDB8860 Pbfree Code Yes
Part Life Cycle Code End Of Life Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 947 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 31 A Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 306 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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