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FDC3535 +BOM

High-voltage P-channel MOSFET in PowerTrench technology

Manufacturer:

Onsemi
Mfr.Part #:

FDC3535
Datasheet:

FDC3535 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDC3535

FDC3535 General Description

Utilizing the latest technology, the FDC3535 P-Channel MOSFET offers exceptional efficiency and reliability. Its advanced Power Trench® process ensures that it delivers optimized r_DS(on) and switching performance, while also being rugged enough to withstand the demands of modern electronics

Key Features

High efficiency and reliability
Excellent thermal performance
Robust design for harsh environments
Advanced manufacturing process

Application

Useful for many different tasks
Matches well with different needs
Handy and versatile

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	2.1 A	Rds On - Drain-Source Resistance	147 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	14 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC3535	Configuration	Single
Forward Transconductance - Min	6.3 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signal
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Width	1.6 mm	Unit Weight	0.001270 oz