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See Technical Specifications

FDC610PZ +BOM

The FDC610PZ is a P-channel MOSFET designed for a maximum voltage of 30V and a current of 4.9A, contained within a 6-pin TSOT-23 package

Manufacturer:

onsemi
Mfr.Part #:

FDC610PZ
Datasheet:

FDC610PZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC610PZ

FDC610PZ General Description

The FDC610PZ is a high-performance Channel MOSFET designed for battery power applications. Utilizing advanced PowerTrench® technology, this MOSFET boasts minimal on state resistance and low gate charge, ensuring superior switching performance. Its versatility makes it well-suited for a range of applications, including load switching, power management, battery charging circuits, and DC/DC conversion. With its optimized design, the FDC610PZ is an ideal choice for engineers and designers looking for reliable and efficient solutions for their power needs

Key Features

Small footprint, high performance
Low gate charge, fast switching
Efficient power consumption, RoHS compliant
Fast recovery time, low r_DS(on)
SuperSOT package, reduced space requirements
High reliability, high performance MOSFET

Application

Excellent for any job.
Works well in all situations.
Adaptable for many purposes.

Specifications

Source Content uid	FDC610PZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Factory Lead Time	46 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	0.0049 A
Drain-source On Resistance-Max	0.042 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	190 pF	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation Ambient-Max	1.6 W
Power Dissipation-Max (Abs)	1.6 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON