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FDC6303N +BOM

TSOT-23-6 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDC6303N
Datasheet:

FDC6303N Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDC6303N

FDC6303N General Description

The FDC6303N is a dual N-Channel logic level enhancement mode field effect transistor that stands out for its innovative technology. Utilizing a high cell density DMOS technology, this transistor boasts a minimized on-state resistance, making it ideal for low voltage applications. Its unique design allows it to serve as a replacement for digital transistors in load switching applications, eliminating the need for bias resistors. This means that with just one N-Channel FET, you can replace multiple digital transistors with different bias resistors, such as those found in the IMHxA series

Key Features

25 V, 0.68 A continuous, 2 A Peak
R_DS(ON) = 0.6 Ω @ V_GS = 2.7 V
R_DS(ON) = 0.45 Ω @ V_GS= 4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5 V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	680 mA	Rds On - Drain-Source Resistance	450 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	650 mV
Qg - Gate Charge	2.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	900 mW
Channel Mode	Enhancement	Series	FDC6303N
Configuration	Dual	Fall Time	8.5 ns
Forward Transconductance - Min	0.145 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	8.5 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Type	FET
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	3 ns
Width	1.6 mm	Part # Aliases	FDC6303N_NL
Unit Weight	0.001270 oz