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FDC6506P +BOM

-pin TSOT-23 P-channel MOSFET with 30V voltage rating

FDC6506P General Description

FDC6506P MOSFETs stand out for their superior design, combining the latest PowerTrench® process with precise engineering to deliver unmatched performance. With a focus on minimizing on-state resistance and reducing gate charge, these P-Channel logic level MOSFETs offer unparalleled switching capabilities. Their compact size makes them a practical solution for applications where traditional package options like SO-8 and TSSOP-8 fall short

Key Features

  • - High reliability and low RDS(ON).
  • Fast switching speed and high performance.
  • Low gate charge for energy efficiency.
  • Compact SuperSOT™-6 package for small designs.
  • Advanced trench technology for reduced losses.
  • Robustness against negative voltages and currents.

Application

  • Perfect for everyday use.
  • Suitable for various tasks.
  • Versatile and efficient product.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.8 A Rds On - Drain-Source Resistance 170 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 3.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 960 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDC6506P Configuration Dual
Fall Time 8 ns Forward Transconductance - Min 3 S
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 P-Channel
Type MOSFET Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 7 ns Width 1.6 mm
Part # Aliases FDC6506P_NL Unit Weight 0.001270 oz

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