This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDC653N +BOM

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDC653N
Datasheet:

FDC653N Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC653N

FDC653N General Description

The FDC653N is a powerful N-Channel enhancement mode field effect transistor that boasts a high cell density, thanks to its unique DMOS technology. This technology not only allows for enhanced performance but also significantly reduces on-state resistance, making this device ideal for a variety of low voltage applications. From notebook computers to portable phones to PCMICA cards, the FDC653N is designed to meet the demanding requirements of battery-powered circuits that necessitate fast switching speeds and minimal power loss. Its compact surface mount package further enhances its versatility, making it a top choice for engineers and designers looking to optimize space in their designs

Key Features

High-speed switching performance
Ultra-low input capacitance
Compact surface-mount design
Low gate-to-source voltage threshold
Robust electrostatic discharge protection
Superior thermal shutdown capability

Application

Perfect for everyday use.
Great for various tasks.
Versatile and reliable.

Specifications

Source Content uid	FDC653N	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	39 Weeks, 4 Days
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	5 A	Drain-source On Resistance-Max	0.055 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.6 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON