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30V 6.3A 1.6W 25mΩ@10V,6.3A 3V@250uA N Channel SSOT-6 MOSFETs ROHS
SSOT-6Manufacturer:
Mfr.Part #:
FDC655BN
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
EDA/CAD Models:
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Engineered for excellence, the FDC655BN stands out as a top-of-the-line N-Channel Logic Level MOSFET that excels in demanding environments where efficiency and performance are paramount. Its cutting-edge PowerTrench process ensures that it delivers minimal on-state resistance and superior switching capabilities, making it ideal for applications that require precision and reliability. Invest in the FDC655BN for your low voltage or battery powered projects and experience the difference that advanced technology can make
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 6.3 A |
Rds On - Drain-Source Resistance | 25 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 13 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.6 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Series | FDC655BN |
Configuration | Single | Fall Time | 4 ns |
Forward Transconductance - Min | 20 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 4 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 22 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.6 mm | Part # Aliases | FDC655BN_NL |
Unit Weight | 0.001270 oz |
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