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See Technical Specifications

FDD850N10L +BOM

N-Channel PowerTrench® MOSFET 100V, 15.7A, 75mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDD850N10L
Datasheet:

FDD850N10L Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDD850N10L

FDD850N10L General Description

Elevate your projects with the FDD850N10L N-Channel MOSFET, engineered using state-of-the-art PowerTrench® technology. By reducing on-state resistance while maintaining top-tier switching performance, this transistor offers unparalleled efficiency for a wide range of applications. Trust in the reliability and precision of this MOSFET to power your systems with optimal performance

Key Features

High Current Handling
Low Leakage Current
Good Temperature Range
Small Package Size

Application

Drones
Smart Plugs
Streaming Devices

Specifications

Source Content uid	FDD850N10L	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	11 Weeks
Avalanche Energy Rating (Eas)	41 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	15.7 A	Drain-source On Resistance-Max	0.096 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	50 W
Pulsed Drain Current-Max (IDM)	63 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON