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FDD86252 +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDD86252
Datasheet:

FDD86252 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDD86252

FDD86252 General Description

Experience the epitome of efficiency with the FDD86252 N-Channel MOSFET, engineered using an advanced Power Trench^® process that prioritizes minimal on-state resistance and unmatched switching prowess. Take your applications to the next level with this high-performance component

Key Features

Advanced Power Management
Max Efficiency: 95%
High Frequency Operation

Application

Sleek desktop computer power supply
Compact device charger

Specifications

Source Content uid	FDD86252	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	40 Weeks
Avalanche Energy Rating (Eas)	72 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	5 A	Drain-source On Resistance-Max	0.052 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	89 W
Pulsed Drain Current-Max (IDM)	25 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON