Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
This P-Channel MOSFET usesan advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
SC-70Manufacturer:
Mfr.Part #:
FDG332PZ
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
6
Configuration:
SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on FDG332PZ. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
I. The FDG332PZ from ON Semiconductor is a high-performance N-channel MOSFET that is ideal for a wide range of applications. Its low gate charge and low on-resistance make it perfect for high-speed switching and amplification circuits, where efficient power management is crucial. With a maximum drain-source voltage of 12 volts and a continuous drain current rating of 1.8 amperes, this MOSFET is well-suited for use in battery-powered devices and other applications where minimizing power losses is important. Its compact SOT-23 package allows for easy integration into small electronic devices and PCB layouts with limited space. Its typical on-resistance of 0.46 ohms at a gate-source voltage of 4.5 volts, and a maximum gate-source threshold voltage of 1.5 volts make it suitable for low-voltage applications where high efficiency and fast switching speeds are essential
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 6 | Reach Compliance Code | |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 0.0026 A | Drain-source On Resistance-Max | 0.095 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 115 pF |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Qualification Status | COMMERCIAL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.573 | $0.57 |
10+ | $0.476 | $4.76 |
30+ | $0.434 | $13.02 |
100+ | $0.384 | $38.40 |
500+ | $0.361 | $180.50 |
1000+ | $0.346 | $346.00 |
The prices below are for reference only.