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See Technical Specifications

FDMC2523P +BOM

Power-33-8 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDMC2523P
Datasheet:

FDMC2523P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC2523P

Email: [email protected]

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Tel: +852 95804164

FDMC2523P General Description

I. The FDMC2523P P-Channel MOSFET enhancement mode power field effect transistor is manufactured using Fairchild's exclusive planar stripe DMOS technology. This particular technology is designed to reduce on-state resistance, offer exceptional switching capabilities, and tolerate high energy pulse in both avalanche and commutation mode. These features make the FDMC2523P perfect for a variety of low voltage applications, including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control

Key Features

Max r_DS(on) = 1.5Ω at V_GS = -10V, I_D = -1.5A
Low C_rss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	3 A	Rds On - Drain-Source Resistance	1.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	42 W
Channel Mode	Enhancement	Tradename	QFET
Series	FDMC2523P	Configuration	Single
Fall Time	13 ns	Forward Transconductance - Min	1.4 S
Height	0.8 mm	Length	3.3 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	QFET
Typical Turn-Off Delay Time	19 ns	Typical Turn-On Delay Time	15 ns
Width	3.3 mm	Unit Weight	0.007408 oz