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FDMC3612 +BOM

100V 12A 110mΩ@10V,3.3A 35W 4V@250uA N Channel Power-33 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDMC3612
Datasheet:

FDMC3612 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC3612

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC3612 General Description

The FDMC3612 N-Channel MOSFET is tailored for those seeking a reliable and efficient solution for their electronics projects. By incorporating the Power Trench® process, this MOSFET offers unparalleled performance with reduced on-state resistance and enhanced switching capabilities. Whether you're a hobbyist or a professional, this MOSFET is sure to exceed your expectations

Key Features

Fast Response Time - 100 ns
Low Power Consumption - 20 μA
High Current Capable - 5 A
Reliable Performance - 99% MTBF
Compact Design - 3 mm x 2.1 mm
Wide Operating Range - 4.75 V to 16.5 V

Application

Great for all projects
Versatile and reliable
Perfect for various uses

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	16 A	Rds On - Drain-Source Resistance	122 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	14.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	35 W
Channel Mode	Enhancement	Series	FDMC3612
Configuration	Single	Fall Time	2 ns
Forward Transconductance - Min	13 S	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	2.8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	N-Channel Power Trench MOSFET	Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	7.4 ns	Width	3.3 mm
Unit Weight	0.006349 oz