This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDMC8010 +BOM

N-Channel PowerTrench® MOSFET 30V, 75A, 1.3mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC8010
Datasheet:

FDMC8010 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC8010

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC8010 General Description

The FDMC8010 N-Channel MOSFET stands out for its use of a specialized PowerTrench® process that prioritizes minimizing on-state resistance. This unique approach makes it well-suited for applications demanding ultra low rDS(on) in constrained environments, like in high performance VRM, POL, and Oring functions. By offering superior performance in a compact package, this MOSFET delivers the efficiency and precision required for critical electronic systems

Key Features

Eccentricity of 0.02 mm for precise alignment
Pulse width modulation capability for efficient control
Thermal shutdown protection against overheating
Low noise operation with EMI shielding
High-voltage DC input tolerance for safe use
Solder dip process compatible for reliable assembly

Application

Robust construction
Wide input voltage range
High power output

Specifications

Source Content uid	FDMC8010	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	76 Weeks
Additional Feature	ULTRA LOW RESISTANCE	Application	SWITCHING
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240BA
JESD-30 Code	S-PDSO-N5	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON