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See Technical Specifications

FDMC8030 +BOM

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC8030
Datasheet:

FDMC8030 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC8030

FDMC8030 General Description

Specifically engineered for exceptional thermal performance, the FDMC8030 is equipped with two 40V N-Channel MOSFETs in a dual Power 33 package. This compact 3 mm X 3 mm MLP package is designed to efficiently dissipate heat, making it an excellent choice for applications with demanding thermal requirements. The dual MOSFET configuration ensures reliable and high-performance power management capabilities, making it a versatile solution for various industrial and consumer electronics applications

Key Features

Max r_DS(on) = 10 mΩ at V_GS = 10 V, I_D = 12 A
Max r_DS(on)= 14 mΩ at V_GS = 4.5 V, I_D = 10 A
Max r_DS(on) = 28 mΩ at V_GS= 3.2 V, I_D= 4 A
Termination is Lead-free and RoHS Compliant

Application

Server

Specifications

Source Content uid	FDMC8030	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Factory Lead Time	75 Weeks	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	21 mJ	Case Connection	DRAIN
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	12 A	Drain-source On Resistance-Max	0.01 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	30 pF
JESD-30 Code	S-PDSO-N4	JESD-609 Code	e4
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	14 W	Power Dissipation-Max (Abs)	14 W
Pulsed Drain Current-Max (IDM)	50 A	Surface Mount	YES
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	43 ns	Turn-on Time-Max (ton)	23 ns