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See Technical Specifications

FDMC86102LZ +BOM

N-Channel 100 V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)

Manufacturer:

onsemi
Mfr.Part #:

FDMC86102LZ
Datasheet:

FDMC86102LZ Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

7A (Ta), 18A (Tc)
EDA/CAD Models:

Request Free CAD Models for FDMC86102LZ

Email: [email protected]

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Tel: +852 95804164

FDMC86102LZ General Description

Experience the unparalleled performance of the FDMC86102LZ N-Channel Logic Level MOSFETs, meticulously crafted using cutting-edge PowerTrench technology and Shielded Gate technology. The result is a MOSFET with optimized on-state resistance and exceptional switching capabilities, ensuring seamless functionality in any application. The addition of a G-S zener provides an extra layer of protection, boosting the product's resilience against ESD voltage levels. With the FDMC86102LZ, you can trust that your electronics will operate smoothly and reliably

Key Features

This product is suitable for automotive applications
With low EMI and fast switching times required
For high-reliability power conversion systems
Suitable for motor control applications with high efficiency

Application

Entrepreneur
Social butterfly
Thrill-seeker

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	24mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1290 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	2.3W (Ta), 41W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount