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See Technical Specifications

FDMC86116LZ +BOM

N-Channel Power Trench® MOSFET 100V, 7.5A, 103mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC86116LZ
Datasheet:

FDMC86116LZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC86116LZ

Email: [email protected]

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Tel: +852 95804164

FDMC86116LZ General Description

Introducing the FDMC86116LZ N-Channel logic Level MOSFETs, meticulously engineered using an innovative Power Trench® process. This tailored approach minimizes on-state resistance without compromising on switching performance. Notably, a G-S Zener element has been integrated to fortify ESD voltage levels, solidifying the MOSFETs' reliability and longevity in demanding operating conditions

Key Features

AES-256 encryption
Supports up to 4K resolution
Dual-band Wi-Fi connectivity
Battery life up to 12 hours
10/100 Mbps Ethernet port
SIP compliant with up to 50 calls

Application

Fashion Accessories
Beauty Products
Gift Items

Specifications

Source Content uid	FDMC86116LZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	66 Weeks
Application	SWITCHING	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PDSO-N5	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON