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FDMC86160ET100 +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC86160ET100
Datasheet:

FDMC86160ET100 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC86160ET100

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FDMC86160ET100 General Description

This N-Channel MOSFET is produced using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low R_DS(on) is required in small spaces such as High performance VRM, POL and orring functions.

Key Features

High-speed switching capability
Ultra-low rDS(on) for high efficiency
Improved thermal performance and reliability
Wide operating temperature range
Fast response time and low input capacitance
Robust and reliable with excellent ESD protection

Application

Advanced Microcontrollers
Electronic Communication Devices
Power Management ICs

Specifications

Source Content uid	FDMC86160ET100	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	55 Weeks
Additional Feature	ULTRA LOW RESISTANCE	Avalanche Energy Rating (Eas)	181 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	9 A
Drain-source On Resistance-Max	0.014 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-240BA	JESD-30 Code	S-PDSO-N5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	204 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON