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See Technical Specifications

FDMC86260 +BOM

The FDMC86260 is suitable for high-power circuits due to its 5.4A current handling capability

Manufacturer:

onsemi
Mfr.Part #:

FDMC86260
Datasheet:

FDMC86260 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

150 V
Current - Continuous Drain (Id) @ 25°C:

5.4A (Ta), 16A (Tc)
EDA/CAD Models:

Request Free CAD Models for FDMC86260

FDMC86260 General Description

Meet the FDMC86260 N-Channel MOSFET, a high-performance electronic component that has been meticulously crafted using the innovative Power Trench^® process. This process is specifically designed to reduce on-state resistance while ensuring optimal switching capabilities, making it a versatile and reliable choice for a wide range of applications

Key Features

Fast switching performance achieved
Ultra low on-resistance ensured
Precision temperature monitoring possible
High-speed data transmission enabled
Ruggedized design for harsh environments
Sophisticated power management system implemented

Application

High-Performance Voltage Converter

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	Current - Continuous Drain (Id) @ 25°C	5.4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	34mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 75 V
FET Feature	-	Power Dissipation (Max)	2.3W (Ta), 54W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount