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FDMC89521L +BOM

Reliable and robust MOSFET for high-voltage, low-current usage

FDMC89521L General Description

Boasting a cutting-edge design, FDMC89521L features a pair of 60 V N-Channel MOSFETs enclosed in a dual Power 33 package. The package, specifically tailored for exceptional thermal efficiency, enhances the overall performance of the device. With a compact footprint of 3 mm X 3 mm MLP, this product is well-suited for demanding environments where heat management is crucial

Key Features

  • Package size: 7 mm x 4.2 mm
  • Max voltage rating: 200 VDC
  • Type A epoxy
  • Thermal resistance: 50 K/W
  • Lead-free solderable terminals
  • RoHS compliant with Directive 2011/65/EU

Application

  • Dog
  • Cat
  • Fish

Specifications

Source Content uid FDMC89521L Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 68 Weeks Additional Feature AVALANCHE ENERGY RATED
Case Connection DRAIN Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.017 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF JESD-30 Code S-PDSO-N4
JESD-609 Code e4 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 4
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 1.9 W
Power Dissipation-Max (Abs) 16 W Surface Mount YES
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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