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See Technical Specifications

FDMD8540L +BOM

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

Manufacturer:

ON
Mfr.Part #:

FDMD8540L
Datasheet:

FDMD8540L Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMD8540L

FDMD8540L General Description

With its dual 40V N-Channel MOSFETs housed in a compact 5 mm x 6 mm package, the FDMD8540L offers exceptional performance for a variety of power applications. Featuring internally connected high-side source and low-side drain, this device is ideal for both half and full bridge configurations. Its low source inductance package and impressive rDS(on)/Qg FOM silicon ensure efficient and effective power management

Key Features

N-Channel MOSFET with High Side Drive Pin-out Capability
Low On-State Resistance
Ultra-High-Speed Switching for DC/DC Converters
Roadside Ready for 12V to 48V Automotive Applications

Application

This product is durable and reliable.
Great for all your household needs.
Perfect for DIY projects and repairs.

Specifications

Source Content uid	FDMD8540L	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	6 Weeks
Avalanche Energy Rating (Eas)	541 mJ	Case Connection	DRAIN SOURCE
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	156 A	Drain-source On Resistance-Max	0.0015 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	135 pF
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	62 W
Pulsed Drain Current-Max (IDM)	886 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	106 ns	Turn-on Time-Max (ton)	52 ns