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FDMS3662 +BOM

N-Channel PowerTrench® MOSFET 100V, 39A, 14.8mΩ

FDMS3662 General Description

Elevate your power management designs with the FDMS3662 N-Channel MOSFET, engineered using advanced PowerTrench® technology to achieve minimal on-state resistance and exceptional switching performance. Whether you're developing high-power servers or sophisticated control systems, this MOSFET is the key to optimizing efficiency and reliability in your applications. Choose the FDMS3662 for innovative solutions that meet the demands of modern power electronics

Key Features

  • Fast Recovery Time for High-Frequency Applications
  • Low Temperature Coefficient for Reliable Performance
  • UL Recognized Component for Safety Assurance

Application

  • Perfect for all your needs.
  • Great for any situation.
  • A versatile choice for you.

Specifications

Source Content uid FDMS3662 Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 55 Weeks
Avalanche Energy Rating (Eas) 384 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8.9 A Drain-source On Resistance-Max 0.0148 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F5
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 5
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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