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See Technical Specifications

FDMS4435BZ +BOM

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS4435BZ
Datasheet:

FDMS4435BZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS4435BZ

FDMS4435BZ General Description

The FDMS4435BZ is a high-performance P-Channel MOSFET designed for power management and load switching applications in notebook computers and portable battery packs. It utilizes an advanced Power Trench® process to minimize on-state resistance, ensuring efficient and reliable performance. Whether you need to control power flow or regulate voltage, this MOSFET is the ideal choice for demanding electronic devices that require optimal power management

Key Features

Rugged construction for harsh environments
Smart sensor technology for real-time monitoring
Advanced thermal management for efficient cooling
Precision timing for reliable performance

Application

Headphones
Keyboard
Mouse

Specifications

Source Content uid	FDMS4435BZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Additional Feature	ULTRA-LOW RESISTANCE	Avalanche Energy Rating (Eas)	18 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	9 A
Drain-source On Resistance-Max	0.02 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	39 W	Pulsed Drain Current-Max (IDM)	50 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON