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See Technical Specifications

FDMS86101DC +BOM

FDMS86101DC is a MOSFET featuring 100V/20V N-channel 2xCool PowerTrench technology

Manufacturer:

Onsemi
Mfr.Part #:

FDMS86101DC
Datasheet:

FDMS86101DC Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMS86101DC General Description

This N-Channel MOSFET is produced using an advanced PowerTrench^® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest r_DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Key Features

Fully Integrated Circuit
Advanced Process Technology
High-Speed Interface Support
Low Power Mode Operation
Rugged Operating Condition
Compact PCB Footprint

Application

Sleek Power Module
Advanced Voltage Control
Efficient Energy Transfer

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	14.5 A
Rds On - Drain-Source Resistance	7.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	44 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDMS86101DC
Configuration	Dual	Height	1.05 mm
Length	6 mm	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	5 mm
Unit Weight	0.003175 oz