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See Technical Specifications

FDMS86103L +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 81A, 8mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS86103L
Datasheet:

FDMS86103L Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86103L

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Tel: +852 95804164

FDMS86103L General Description

Engineered with precision, the FDMS86103L N-Channel MOSFET sets a new standard in power electronics. Utilizing the latest Power Trench® technology, this MOSFET boasts minimized on-state resistance for maximum efficiency without compromising on switching performance. Whether used in automotive, industrial, or consumer electronics, this MOSFET delivers unparalleled reliability and power handling capabilities, ensuring optimal operation in demanding environments

Key Features

Advanced Power MOSFET Technology
Max rDS(on) = 4 mΩ at VGS = 12V, ID = 15A
Low RDS(on) and High Efficiency for Wide Range of Applications
MSL1 Robust Package Design for Low In-Process Damage
100% UI Tested
RoHS Compliant

Application

Suitable for any task.
Works in multiple situations.
Adaptable for all needs.

Specifications

Source Content uid	FDMS86103L	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	49 Weeks
Avalanche Energy Rating (Eas)	312 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	12 A	Drain-source On Resistance-Max	0.008 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	104 W	Pulsed Drain Current-Max (IDM)	100 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON